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GM71V17803C GM71VS17803CL
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM
Description
The GM71V(S)17803C/CL is the new generation dynamic RAM organized 2,097,152 x 8 bit. GM71V(S)17803C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71V(S)17803C/CL offers Extended Data out(EDO) Page Mode as a high speed access mode. Multiplexed address inputs permit the GM71V(S)17803C/CL to be packaged in standard 400 mil 28pin plastic SOJ, and standard 400mil 28pin plastic TSOP II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment.
Features
* 2,097,152 Words x 8 Bit Organization * Extended Data Out Mode Capability * Single Power Supply (3.3V+/-0.3V) * Fast Access Time & Cycle Time (Unit: ns)
tRAC tCAC
GM71V(S)17803C/CL-5 GM71V(S)17803C/CL-6 GM71V(S)17803C/CL-7 50 60 70 13 15 18
tRC
84 104 124
tHPC
20 25 30
Pin Configuration 28 SOJ
VCC 1 I/O0 2 I/O1 3 I/O2 4 I/O3 5 WE RAS 7 NC 8 A10 9 A0 10 A1 11
6 28 VSS 27 I/O7 26 I/O6 25 I/O5 24 I/O4 23 CAS 22 OE 21 A9 20 A8 19 A7 18 A6 17 A5 16 A4 15 VSS
* Low Power Active : 396/360/324mW (MAX) Standby : 7.2mW (CMOS level : MAX) 0.36mW (L-version : MAX) * RAS Only Refresh, CAS before RAS Refresh, Hidden Refresh Capability *All inputs and outputs TTL Compatible * 2048 Refresh Cycles/32ms * 2048 Refresh Cycles/128ms (L-version) * Self Refresh Operation (L-version) * Battery Back Up Operation (L-version)
VCC 1 I/O0 2 I/O1 3 I/O2 4 I/O3 5 WE 6 RAS 7 NC
8
VSS I/O7 I/O6 I/O5 I/O4 CAS
28 27 26 25 24 23
VSS I/O7 I/O6 I/O5 I/O4 CAS
22 OE 21 A9 20 A8 19 A7 18 A6 17 A5 16 A4
A10 9 A0 10 A1 11 A2 12 A3 13 VCC 14 VSS
om .c 4u et he as at .d w w w
A2 12 A3 13 VCC 14
15 VSS
(Top View)
Rev 0.1 / Apr'01
www..com
28 TSOP II
GM71V17803C GM71VS17803CL
Pin Description
Pin
A0-A10 A0-A10 I/O0-I/O7 RAS CAS
Function
Address Inputs Refresh Address Inputs Data Input/ Data Output Row Address Strobe Column Address Strobe
Pin
WE OE VCC VSS NC
Function
Read/Write Enable Output Enable Power (+3.3V) Ground No Connection
Ordering Information
Type No.
GM71V(S)17803CJ/CLJ -5 GM71V(S)17803CJ/CLJ -6 GM71V(S)17803CJ/CLJ -7 GM71V(S)17803CT/CLT -5 GM71V(S)17803CT/CLT -6 GM71V(S)17803CT/CLT -7
Access Time
50ns 60ns 70ns 50ns 60ns 70ns
Package
400 Mil 28 Pin Plastic SOJ 400 Mil 28 Pin Plastic TSOP II
Absolute Maximum Ratings*
Symbol TA TSTG VIN/OUT VCC IOUT PD Parameter
Ambient Temperature under Bias Storage Temperature Voltage on any Pin Relative to VSS Supply Voltage Relative to VSS Short Circuit Output Current Power Dissipation
Rating
0 ~ 70 -55 ~ 125 -0.5 ~ Vcc+0.5 (<=4.6V(MAX)) -0.5 ~ 4.6 50 1.0
Unit
C C V V mA W
Note: Operation at or above Absolute Maximum Ratings can adversely affect device reliability.
Recommended DC Operating Conditions (TA = 0 ~ 70C)
Symbol VCC VIH VIL Parameter
Supply Voltage Input High Voltage Input Low Voltage
Min
3.0 2.0 -0.3
Typ
3.3 -
Max
3.6 VCC + 0.3 0.8
Unit
V V V
Note: All voltage referred to Vss.
Rev 0.1 / Apr'01
GM71V17803C GM71VS17803CL
DC Electrical Characteristics (VCC = 3.3V+/-0.3V, Vss = 0V, TA = 0 ~ 70C)
Symbol VOH VOL ICC1 Parameter
Output Level Output "H" Level Voltage (IOUT = -2mA) Output Level Output "L" Level Voltage (IOUT = 2mA) Operating Current Average Power Supply Operating Current (RAS, CAS Cycling: tRC = tRC min) Standby Current (TTL) Power Supply Standby Current (RAS, CAS = VIH, DOUT = High-Z) RAS Only Refresh Current Average Power Supply Current RAS Only Refresh Mode (tRC = tRC min) EDO Page Mode Current Average Power Supply Current EDO Page Mode (tHPC = tHPC min) Standby Current (CMOS) Power Supply Standby Current (RAS, CAS >VCC - 0.2V, DOUT = High-Z) CAS-before-RAS Refresh Current (tRC = tRC min) 50ns 60ns 70ns 50ns 60ns 70ns 50ns 60ns 70ns 50ns 60ns 70ns
Min
2.4 0 -
Max
VCC 0.4 110 100 90 2 110 100 90 100 90 85 1 150 110 100 90 400
Unit
V V
Note
mA
1, 2
ICC2
mA
ICC3
mA
2
ICC4
mA
1, 3
ICC5
mA uA 5
ICC6
mA
ICC7
Battery Back Up Operating Current(Standby with CBR Ref.) (CBR refresh, tRC= 62.5us, tRAS<= 0.3us, DOUT=High-Z, CMOS Interface) Standby Current RAS = VIH CAS = VIL DOUT = Enable Self-Refresh Mode Current (RAS, CAS<= 0.2V, DOUT=High-Z, CMOS interface) Input Leakage Current Any Input (0V<= VIN<= 4.6V) Output Leakage Current (DOUT is Disabled, 0V<= VOUT<= 4.6V)
uA
4,5
ICC8 ICC9 IL(I) IL(O)
-10 -10
5 250 10 10
mA uA uA uA
1 5
Note: 1. ICC depends on output load condition when the device is selected. ICC(max) is specified at the output open condition. 2. Address can be changed once or less while RAS = VIL. 3. Address can be changed once or less while CAS = VIH. 4. CAS = L (<=0.2V) while RAS = L (<=0.2V). 5. L -version.
Rev 0.1 / Apr'01
GM71V17803C GM71VS17803CL
Capacitance (VCC = 3.3V+/-0.3V, TA = 25C)
Symbol CI1 CI2 CI/O Parameter
Input Capacitance (Address) Input Capacitance (Clocks) Output Capacitance (Data-In/Out)
Min
-
Max
5 7 7
Unit
pF pF pF
Note
1 1 1, 2
Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method. 2. CAS = VIH to disable DOUT.
AC Characteristics (VCC = 3.3V+/-0.3V, TA = 0 ~ +70C, Note 1, 2, 18)
Test Conditions
Input rise and fall times : 2 ns Input levels : VIL = 0V, VIH = 3V Input timing reference levels : 0.8V, 2.0V Output timing reference levels : 0.8V, 2.0V Output load : 1TTL gate + CL (100 pF) (Including scope and jig)
Read, Write, Read-Modify-Write and Refresh Cycles (Common Parameters)
Symbol Parameter
Random Read or Write Cycle Time RAS Precharge Time CAS Precharge Time RAS Pulse Width CAS Pulse Width Row Address Set up Time Row Address Hold Time Column Address Set-up Time Column Address Hold Time RAS to CAS Delay Time RAS to Column Address Delay Time RAS Hold Time CAS Hold Time CAS to RAS Precharge Time OE to DIN Delay Time OE Delay Time from DIN CAS Delay Time from DIN Transition Time (Rise and Fall)
GM71V(S)17803 GM71V(S)17803 GM71V(S)17803 C/CL-6 C/CL-7 C/CL-5
Unit
ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
Note
Min Max Min Max Min Max
tRC tRP tCP tRAS tCAS tASR tRAH tASC tCAH tRCD tRAD tRSH tCSH tCRP tODD tDZO tDZC tT
84 30 8
-
104 40 10
-
124 50 13
-
50 10,000 8 10,000 0 8 0 8 12 10 10 35 5 13 0 0 2 37 25 50
60 10,000 10 10,000 0 10 0 10 14 12 13 40 5 15 0 0 2 45 30 50
70 10,000 13 10,000 0 10 0 13 14 12 13 45 5 18 0 0 2 52 35 50
3 4
5 6 6 7
Rev 0.1 / Apr'01
GM71V17803C GM71VS17803CL
Read Cycle
Symbol Parameter
Access Time from RAS Access Time from CAS Access Time from Address Access Time from OE Read Command Setup Time Read Command Hold Time to CAS Read Command Hold Time to RAS Column Address to RAS Lead Time Column Address to CAS Lead Time CAS to Output in Low-Z Output Data Hold Time Output Data Hold Time from OE Output Buffer Turn-off Time Output Buffer Turn-off Time to OE CAS to DIN Delay Time Read Command Hold Time from RAS Output Data hold Time from RAS Output Buffer turn off to RAS Output Buffer turn off to WE WE to DIN Delay Time RAS to DIN Delay Time
GM71V(S)17803 GM71V(S)17803 GM71V(S)17803 C/CL-5 C/CL-6 C/CL-7
Unit
ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
Note
8,9 9,10,17 9,11,17 9
Min Max
Min Max Min Max 0 0 5 30 18 0 3 3 15 60 3 15 15 60 15 30 15 15 15 15 15 0 0 5 35 23 0 3 3 18 70 3 18 18 70 18 35 18 15 15 15 15 -
tRAC tCAC tAA tOAC tRCS tRCH tRRH tRAL tCAL tCLZ tOH tOHO tOFF tOEZ tCDD
tRCHR tOHR tOFR tWEZ tWDD tRDD
0 0 5 25 15 0 3 3 13 50 3 13 13
50 13 25 13 13 13 13 13 -
12 12
13 13 5
Rev 0.1 / Apr'01
GM71V17803C GM71VS17803CL
Write Cycle
Symbol Parameter
Write Command Setup Time Write Command Hold Time Write Command Pulse Width Write Command to RAS Lead Time Write Command to CAS Lead Time Data-in Setup Time Data-in Hold Time
GM71V(S)17803 GM71V(S)17803 GM71V(S)17803 C/CL-5 C/CL-6 C/CL-7
Unit
ns ns ns ns ns ns ns
Note
14
Min Max Min Max Min Max
tWCS tWCH
0 8 8 8 8 0 8
-
0 10 10 10 10 0 10
-
0 13 10 13 13 0 13
-
tWP
tRWL tCWL tDS tD
H
15 15
Read- Modify-Write Cycle
Symbol Parameter
Read-Modify-Write Cycle Time RAS to WE Delay Time CAS to WE Delay Time Column Address to WE Delay Time OE Hold Time from WE
GM71V(S)17803 GM71V(S)17803 GM71V(S)17803 C/CL-5 C/CL-6 C/CL-7
Unit
ns ns ns ns ns
Note
Min Max Min Max Min Max
tRWC tRWD tCWD tAWD tOEH
111 67 30 42 13
-
136 79 34 49 15
-
161 92 40 57 18
-
14 14 14
Refresh Cycle
Symbol Parameter
CAS Setup Time (CAS-before-RAS Refresh Cycle) CAS Hold Time (CAS-before-RAS Refresh Cycle) WE Setup Time (CAS-before-RAS Refresh Cycle) WE Hold Time (CAS-before-RAS Refresh Cycle) RAS Precharge to CAS Hold Time
GM71V(S)17803 GM71V(S)17803 GM71V(S)17803 C/CL-5 C/CL-6 C/CL-7
Unit
Note
Min Max Min Max Min Max
tCSR tCHR tWRP tWRH tRPC
5 8 0 10 5
-
5 10 0 10 5
-
5 10 0 10 5
-
ns ns ns ns ns
Rev 0.1 / Apr'01
GM71V17803C GM71VS17803CL
EDO Page Mode Cycle
Symbol Parameter
EDO Page Mode Cycle Time EDO Page Mode RAS Pulse Width Access Time from CAS Precharge RAS Hold Time from CAS Precharge Output data Hold Time from CAS low CAS Hold Time referred OE CAS to OE Setup Time Read command Hold Time from CAS Precharge
GM71V(S)17803 GM71V(S)17803 GM71V(S)17803 C/CL-5 C/CL-6 C/CL-7
Unit
ns ns ns ns ns ns ns ns
Note
19 16 9,17
Min Max Min Max Min Max
tHPC tRASP tACP tRHCP tDOH tCOL tCOP tRCHP
20 30 3 8 5 30
100,000
25 35 3 10 5 35
100,000
30 40 3 13 5 40
100,000
30 -
35 -
40 -
9,17
EDO Page Mode Read-Modify-Write Cycle
Symbol Parameter
EDO Page Mode Read-Modify-Write Cycle Time WE Delay Time from CAS Precharge
GM71V(S)17803 GM71V(S)17803 GM71V(S)17803 C/CL-5 C/CL-6 C/CL-7
Unit
ns ns
Note
Min Max Min Max Min Max
tHPRWC tCPW
57 45
-
68 54
-
79 62
-
14
Refresh
Symbol Parameter
GM71V(S)17803 GM71V(S)17803 GM71V(S)17803 C/CL-5 C/CL-6 C/CL-7
Unit
Note
2048 cycles 2048 cycles
Min Max Min Max
Min Max 32 128 ms ms
tREF tREF
Refresh period Refresh period (L -version)
-
32 128
-
32 128
-
-
Self Refresh Mode ( L-version )
Symbol Parameter
RAS Pulse Width(Self-Refresh) RAS Precharge Time(Self-Refresh) CAS Hold Time(Self-Refresh)
GM71VS17400 CL-5 GM71VS17400 CL-6 GM71VS17400 CL-7
Unit
us ns ns
Note
Min Max
Min Max Min Max 100 110 -50 100 130 -50 -
tRASS tRPS tCHS
100 90 -50
-
Rev 0.1 / Apr'01
GM71V17803C GM71VS17803CL
Notes: 1. AC Measurements assume tT = 2ns. 2. An initial pause of 200us is required after power up followed by a minimum of eight initialization cycles (any combination of cycles containing RAS only refresh or CAS-beforeRAS refresh). If the internal refresh counter is used, a minimum of eight CAS-before-RAS refresh cycles are required. 3. Operation with the tRCD(max) limit insures that tRAC(max) can be met, tRCD(max) is specified as a reference point only; if tRCD is greater than the specified tRCD(max) limit, then access time is controlled exclusively by tCAC. 4. Operation with the tRAD(max) limit insures that tRAC(max) can be met, tRAD(max) is specified as a reference point only; if tRAD is greater than the specified tRAD(max) limit, then access time is controlled exclusively by tAA. 5. Either tODD or tCDD must be satisfied. 6. Either tDZO or tDZC must be satisfied. 7. VIH (min) and VIL (max) are reference levels for measuring timing of input signals. Also, transition times are measured between VIH (min) and VIL (max). 8. Assumes that tRCD <= tRCD (max) and tRAD <= tRAD (max). If tRCD or tRAD is greater than the maximum recommended value shown in this table, tRAC exceeds the value shown. 9. Measured with a load circuit equivalent to 1TTL loads and 100pF. 10. Assumes that tRCD >= tRCD (max) and tRAD <= tRAD (max). 11. Assumes that tRCD <= tRCD (max) and tRAD >= tRAD (max). 12. Either tRCH or tRRH must be satisfied for a read cycles. 13. tOFF (max) and tOEZ (max) define the time at which the outputs achieve the open circuit condition and are not referred to output voltage levels. 14. tWCS, tRWD, tCWD , tAWD and tCPW are not restrictive operating parameters. They are included in the data sheet as electrical characteristics only; if tWCS >=tWCS(min), the cycle is an early write cycle and the data out pin will remain open circuit (high impedance) throughout the entire cycle; if tRWD>=tRWD(min), tCWD>=tCWD(min) and tAWD>=tAWD(min), or tCWD>=tCWD(min), tAWD>=tAWD(min) and tCPW>=tCPW(min), the cycle is a read modify write and the data output will contain data read from the selected cell; if neither of the above sets of conditions is satisfied, the condition of the data out (at access time) is indeterminate. 15. These parameters are referred to CAS leading edge in early write cycle and to WE leading edge in a delayed write or a read modify write cycle. 16. tRASP defines RAS pulse width in EDO page mode cycles. 17. Access time is determined by the longest among tAA , tCAC and tACP. 18. In delayed write or read-modify-write cycles, OE must disable output buffer prior to applying data to the device. After RAS is reset, if tOEH>=tCWL, the I/O pin will remain open circuit (high impedance): if tOEH<=tCWL, invalid data will be out at each I/O. 19. EDO Hi-Z control by OE or WE. OE rising edge disables data outputs. When OE goes high during CAS high, the data will not come out until next CAS access. When WE goes low during CAS high, the data will not come out until next CAS access. 20. tHPC(min) can be achieved during a series of EDO mode write cycles or EDO mode read cycles. If both write and read operation are mixed in a EDO mode RAS cycle(EDO mode mix cycle (1),(2) ) minimum value of CAS cycle (tCAS + tCP + 2tT) becomes greater than the specified tHPC(min) value. The value of CAS cycle time of mixed EDO mode is shown in EDO mode mix cycle (1) and (2).
Rev 0.1 / Apr'01
GM71V17803C GM71VS17803CL
Package Dimensions
28 SOJ
0.025(0.64) MIN 0.405(10.29) MAX 0.445(11.30) MAX 0.395(10.03) MIN 0.435(11.06) MIN 0.366(9.30) MIN
0~5
Unit: Inches (mm)
0.710(18.04) MIN 0.720(18.30) MAX
0.083(2.10) MIN
0.128(3.25) MIN 0.148(3.75) MAX 0.050(1.27) TYP 0.015(0.38) MIN 0.020(0.50) MAX 0.026(0.66) MIN 0.032(0.81) MAX
28 TSOP (TYPE II)
o
0.016(0.40) MIN 0.024(0.60) MAX
0.405(10.29) MAX
0.720(18.28) MIN 0.730(18.54) MAX 0.037(0.95) MIN 0.041(1.05) MAX 0.047(1.20) MAX 0.012(0.30) MIN 0.020(0.50) MAX 0.050(1.27) TYP 0.003(0.08) MIN 0.007(0.18) MAX
0.471(11.96) MAX
0.394(10.03) MIN
0.455(11.56) MIN
0.004(0.12) MIN 0.008(0.21) MAX
Rev 0.1 / Apr'01
0.375(9.55) MAX

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